Last edited by Nikojas
Monday, October 19, 2020 | History

2 edition of Tungsten and Other Refactory Metals for Vlsi Applications III (Materials Research Society Conference Proceedings) found in the catalog.

Tungsten and Other Refactory Metals for Vlsi Applications III (Materials Research Society Conference Proceedings)

Victor Wells

Tungsten and Other Refactory Metals for Vlsi Applications III (Materials Research Society Conference Proceedings)

by Victor Wells

  • 390 Want to read
  • 5 Currently reading

Published by Materials Research Society .
Written in English

    Subjects:
  • Chemistry - General,
  • Very-Large-Scale Integration (Vlsi),
  • Science,
  • Science/Mathematics

  • The Physical Object
    FormatHardcover
    ID Numbers
    Open LibraryOL11479318M
    ISBN 100931837847
    ISBN 109780931837845

    Also discussed in this paper will be the effect of the first metal (Tungsten vs Aluminum) on electromigration characteristics. Proc. Tungsten and Other Refractory Metals for VLSI Applications. This book presents the papers given at two conferences on tungsten and other refractory metals for VLSI applications. Topics considered include the microstructural characterization of low pressure.

    Books about The Method of Iterated Tangents with Applications in Local Riemannian Geometry. Language: en Pages: Party Government in 48 Democracies (–) Authors: J.J. Woldendorp, Hans Keman, I. Budge. Categories: Political Science. The nucleation and growth characteristics of CVD-W on Ti/TiN barrier layers with SiH 4 and H 2 reduction chemistries are presented. In particular, the reaction between WF 6 (precursor used for depositing W) and the underlying Ti of the barrier stack was studied to better understand the chemistry of ‘volcano’ formation - a phenomena that causes severe defects in the deposited W film.

    G. C. Smith and R. Blumenthal, Tungsten and Other Advanced Metals for ULSI Applications, MRS Conference Proc. (Materials Research Society, Pittsburgh, ). Google Scholar; 5. R. Blewer and T. Headly, Proceedings of the Workshop on Tungsten and Other Refractory Metals for VLSI Applications III (Materials Research Society, Pittsburg, A. Wells, Materials Research Society, and Workshop on Tungsten and Other Refractory Metals for VLSI Applications, in Tungsten and Other Refractory Metals for VLSI Applications III (Materials Research Society, Pittsburgh, PA, ).


Share this book
You might also like
Guideline related to Bank of Canada oversight activities under the Payment Clearing and Settlement Act.

Guideline related to Bank of Canada oversight activities under the Payment Clearing and Settlement Act.

The old house

The old house

Springfield Leisure art collection.

Springfield Leisure art collection.

Guidelines for the planning, installation and maintenance of utility services in proximity to trees.

Guidelines for the planning, installation and maintenance of utility services in proximity to trees.

Behavior and development in childhood

Behavior and development in childhood

5th Annual General Conference of the Electoral Commission Forum of SADC Countries

5th Annual General Conference of the Electoral Commission Forum of SADC Countries

Creating & Using Investment Policies

Creating & Using Investment Policies

Standards for judging the degree of forage utilization of California annual-type ranges

Standards for judging the degree of forage utilization of California annual-type ranges

W.B. Yeats

W.B. Yeats

FHP

FHP

Report of the inspectors inquiry into the loss of the fishing vessel Gorah Lass with three lives on 11 March 1997 off Portreath, North Cornwall

Report of the inspectors inquiry into the loss of the fishing vessel Gorah Lass with three lives on 11 March 1997 off Portreath, North Cornwall

Delightful world of poems

Delightful world of poems

Tungsten and Other Refactory Metals for Vlsi Applications III (Materials Research Society Conference Proceedings) by Victor Wells Download PDF EPUB FB2

Tungsten and Other Refractory Metals for VLSI Applications III: Volume 3 (MRS Conference Proceedings) [Wells, Victor A.] on *FREE* shipping on qualifying offers. Tungsten and Other Refractory Metals for VLSI Applications III: Volume 3 (MRS Conference Proceedings). Get this from a library.

Tungsten and other refractory metals for VLSI applications III: proceedings of the workshop held October, IBM Thomas J. Watson Research Center, Yorktown Heights, New York, U.S.A. [Victor A Wells; Materials Research Society.;]. Abstract. This book presents the papers given at two conferences on tungsten and other refractory metals for VLSI applications.

Topics considered include the microstructural characterization of low pressure chemical vapor deposition (LPCVD) tungsten films, properties of CVD tungsten films deposited at atmospheric and reduced pressures, the adhesion of tungsten films to dielectrics, crystal.

This book presents the papers given at two conferences on tungsten and other refractory metals for VLSI applications. Topics considered include the microstructural characterization of low pressure chemical vapor deposition (LPCVD) tungsten films, properties of CVD tungsten films deposited at atmospheric and reduced pressures, the adhesion of tungsten films to dielectrics, crystal doping.

Get this from a library. Tungsten and other refractory metals for VLSI applications II: proceedings of the workshop held November, Palo Alto, California, U.S.A. [Eliot K Broadbent; R S Blewer; University of California, Berkeley.

Continuing Education in Engineering.;]. C.M. McConica and S. Churchill () “Step coverage prediction during blanket CVD tungsten deposition” in “Tungsten and Other Refractory Metals for VLSI Applications III”, V.

Wells (ed.), pp. –, The Materials Research Society, Pittsburgh, USA Google Scholar. Tungsten and Other Advanced Metals for VLSI/ULSI Applications V Proceedings of the Workshop held September, San Mateo, California, U.S.A., sponsored by Continuing Education in Engineering, University Extension, University of California, Berkeley; and OctoberTokyo, Japan, sponsored by the Japan Society of Applied.

D.J. Bradbury, J.E. Turner, K. Nauka, and K.Y. Chiu (), “Selective CVD Tungsten as an alternative to blanket Tungsten for Submicron Plug Applications on VLSI Circuits”, I Digest of Technical Papers, p, Washington Google Scholar. Book Search tips Selecting this option will search all publications across the Scitation platform Selecting the proceedings of the Workshops on Tungsten and Other Refractory Metals for VLSI Applications I to V, edited by R.

S in Tungsten and Other Refractory Metals for VLSI Applications III, edited by V. Wells (Materials Research. Tungsten, Refractory Metals & Alloys 4: Processing, Properties & Applications by Animesh Bose (Author), Robert J. Dowding (Editor) ISBN   T. Nishimura and Y. Akasaka Tungsten and Other Refractory Metals for VLSI Application IV (Materials Research Soc, Pittsburgh) p.

Tungsten and Other Refractory Metals for VLSI Applications III (Materials Research Soc J. Suijker and M. Buiting Tungsten and Other Refractory Metals for VLSI Applications IV ed. “Poisson’s ratio measurement in tungsten thin films combining an x-ray diffractometer with in situ tensile tester Tungsten and Other Refractory Metals for VLSI Applications, “Adhesion of non-selective CVD tungsten to silicon dioxide”.

The effect of blanket chemical vapor deposition (CVD) of tungsten (SiH 4 reduction) on shallow CoSi 2 junctions using – Å of titanium‐tungsten (TiW) as a diffusion barrier has been investigated.

Thermal stability of W/TiW and Al/W/TiW is studied by measuring the reverse leakage current at 25 °C anneal intervals. The Al/TiW structure has been used as a reference. Blanket tungsten is deposited in an Applied Materi- als P CVD system by a modified process that is routinely applied for via fill purposes in VLSI tech- nology [9,10].

The process is based on the thermal decomposi- tion of WE6 by H2 at a wafer temperature of less than   Dielectric materials and surface pretreatment are important for the control of selectivity loss during the chemical vapor deposition (CVD) of W in SiH 4 / H 2 / WF 6 ambient.

Water-related silanol (SiOH) units on an oxide surface, which come from a wet cleaning step and moisture in clean room air, are found to act as nucleation centers, resulting in selectivity loss.

Purchase Chemical Vapor Deposition of Tungsten and Tungsten Silicides for VLSI/ ULSI Applications - 1st Edition. Print Book & E-Book. ISBNAlloying of tungsten (W) has been relatively less studied than of some of the other refractory metals.

Most of the tungsten used thus far in aerospace applications has been in the unalloyed form, which is much easier and less expensive to produce and fabricate. Tungsten and molybdenum films have been deposited on silicon by the pyrolysis of hexacarbonyls at °C under atmospheric pressure.

Auger analysis of W films produced by the pyrolysis of W(CO) 6 reveals a large amount of carbon and oxygen. Post-deposition rapid thermal annealing at a temperature less than °C and hydrogen-containing atmosphere leads to obtaining low-resistivity. Chemical vapor deposition (CVD) of tungsten nucleation films is typically done using silane (SiH 4) reduction of tungsten hexafluoride (WF 6).

For SiH 4 /WF 6 flow ratios of ≤ 1, pure tungsten of bulk density and resistivity is deposited. Upon increasing the ratio to 2, nearly 40 at.% Si is incorporated in tungsten. It is shown that cast targets of highly pure refractory metals like W, Mo, Ti, Ta, Co, etc.

and their compounds can be produced by means of a set of vacuum-metallurgical techniques—by vacuum high-frequency levitation, EB floating zone melting, EB melting, and electric arc vacuum melting as well as chemical purifying by ion exchange and halides.

The cast refractory metal targets are. Tungsten is among the heaviest metals found on Earth. It has excellent high-temperature mechanical properties, with the lowest expansion coefficient and highest conductivity of all metals. Advanced Refractory Metals is a leading supplier of Tungsten products.A mathematical model for low pressure chemical vapor deposition in a single-wafer reactor in stagnation point flow has been developed to investigate the reactor performance.

The transient transport equations for a simulated reactor include continuity, momentum, energy, and gaseous species balances. The model equations are simultaneously solved by using a numerical technique of orthogonal.Base, Ohio, on the Oxidation of Tungsten mechanisms of oxidation of tungsten, and Other Refractory Metals, The tantalum, and columbium.

ill. ML-TR INTRODUCTORY REMARKS Paul L. Faust Since World War II metallurgical research in commercial applications. and should find application where ductility peratures above F. Sulicides for colum.